Factory Lead Time  

12 Weeks

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type  

Surface Mount

Mount  

Surface Mount

Number of Pins  

3

Transistor Element Material  

SILICON

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

195A Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Turn Off Delay Time  

118 ns

Power Dissipation (Max)  

375W Tc

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tape & Reel (TR)

Published  

2006

Series  

HEXFET®

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Resistance  

2.5MOhm

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Position  

SINGLE

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G2

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

375W

Case Connection  

DRAIN

Turn On Delay Time  

16 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

2.5m Ω @ 170A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

8970pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

300nC @ 10V

Rise Time  

182ns

Vgs (Max)  

±20V

Fall Time (Typ)  

189 ns

Continuous Drain Current (ID)  

195A

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

270A

Drain to Source Breakdown Voltage  

60V

Length  

10.668mm

Height  

4.826mm

Width  

9.65mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

Lead Free  

Lead Free